Infineon IPB80P04P4L-06: High-Performance P-Channel Power MOSFET for Automotive and Industrial Applications

The demand for efficient and robust power management solutions continues to grow across the automotive and industrial sectors. Addressing this need, the Infineon IPB80P04P4L-06 stands out as a high-performance P-Channel Power MOSFET engineered to deliver superior performance in demanding applications. This component is specifically designed to meet the rigorous requirements of modern electronic systems, where reliability, efficiency, and compactness are paramount.

As a P-Channel MOSFET, the IPB80P04P4L-06 offers distinct advantages in circuit design, particularly in high-side switching applications. Its low gate charge and exceptional avalanche ruggedness ensure efficient switching performance, which is critical for minimizing power losses and enhancing overall system efficiency. With a maximum drain-source voltage of -40 V and a continuous drain current of -80 A, this MOSFET is capable of handling high power levels while maintaining stable operation. The device’s low on-resistance (RDS(on)) of just 4.5 mΩ significantly reduces conduction losses, making it an ideal choice for power-intensive applications such as motor control, power distribution systems, and load switching.

In the automotive industry, where components must operate reliably under extreme conditions, the IPB80P04P4L-06 excels. It is AEC-Q101 qualified, ensuring it meets the stringent quality and reliability standards required for automotive electronics. This makes it suitable for a wide range of automotive applications, including electric power steering (EPS), braking systems, and advanced driver-assistance systems (ADAS). Its ability to perform reliably at high temperatures and under high stress conditions underscores its robustness.

Similarly, in industrial applications, this MOSFET proves invaluable for systems requiring high efficiency and durability. From factory automation and robotics to power supplies and battery management systems, the IPB80P04P4L-06 provides the thermal stability and high current handling capabilities needed to ensure long-term performance. The device’s TOLL (TO-Leadless) package offers a compact footprint while enhancing thermal efficiency, which is crucial for space-constrained industrial designs.

ICGOOFind: The Infineon IPB80P04P4L-06 is a top-tier P-Channel Power MOSFET that combines high efficiency, robustness, and compact design. Its exceptional performance makes it a preferred choice for automotive and industrial applications, where reliability and power efficiency are critical.

Keywords:

P-Channel MOSFET, Automotive Electronics, High Efficiency, Low RDS(on), AEC-Q101 Qualified