Infineon FP100R12KT4_B11: High-Performance 1200V IGBT Power Module
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous evolution of semiconductor technology. At the forefront of this innovation are advanced IGBT power modules, with the Infineon FP100R12KT4_B11 standing out as a premier solution for demanding high-power applications. This module encapsulates cutting-edge engineering to deliver superior performance where it matters most.
Engineered for robustness, the FP100R12KT4_B11 is a 1200V, 100A half-bridge IGBT module. This voltage and current rating makes it an ideal candidate for a wide array of industrial systems, including industrial motor drives, high-power UPS (Uninterruptible Power Supplies), renewable energy inverters for solar and wind, and industrial welding equipment. Its half-bridge configuration provides designers with a versatile building block for various converter topologies like two-level voltage source inverters.
The core of its high-performance characteristics lies in Infineon's proven IGBT4 trench-stop and field-stop technology. This advanced chip technology achieves an optimal trade-off between low saturation voltage (Vce(sat)) and minimal switching losses. The result is significantly reduced conduction and switching losses, which directly translates into higher overall system efficiency and lower operating temperatures. This allows for either more compact designs with smaller heatsinks or higher output power within the same form factor.
Further enhancing its switching performance is the integrated anti-parallel emitter-controlled HEXTO diode. This proprietary diode technology is crucial for controlling reverse recovery behavior, minimizing overshoot and ringing during switching events. This not only reduces electromagnetic interference (EMI) but also lowers stress on the IGBTs, contributing to the module's exceptional reliability and longevity.
Beyond the silicon, the module is designed for durability and ease of use. It features low-induance busbar interfaces (B11 option), which are critical for minimizing parasitic inductance in the main power circuit. This is essential for managing voltage spikes during high-speed switching and ensuring stable, predictable operation. The module also offers a wide operating junction temperature range (Tvj op), typically up to 150°C, and utilizes AL2O3 (Alumina) ceramic substrates for excellent electrical isolation and thermal performance. The robust package ensures high power cycling capability, making it suitable for the rigorous demands of industrial environments.
ICGOODFIND: The Infineon FP100R12KT4_B11 is a benchmark high-power module that expertly balances low losses, robust switching, and exceptional reliability. Its advanced IGBT4 and diode technology, combined with a low-inductance design, make it a top-tier choice for engineers designing efficient and compact high-power conversion systems across industrial and renewable energy sectors.
Keywords: IGBT Module, High Power Density, 1200V, Low Switching Losses, Industrial Drives
