Infineon IPD068N10N3GATMA1 100V N-Channel Power MOSFET for High-Efficiency Automotive Applications

The rapid evolution of automotive electronics demands power components that deliver superior efficiency, reliability, and thermal performance. The Infineon IPD068N10N3GATMA1, a 100V N-channel power MOSFET, stands out as a premier solution engineered specifically for the rigorous demands of modern automotive applications. Leveraging Infineon’s advanced OptiMOS™ technology, this MOSFET sets a new benchmark in power switching by significantly reducing conduction and switching losses, which is critical for enhancing overall system efficiency.

A key attribute of the IPD068N10N3GATMA1 is its exceptionally low on-state resistance (RDS(on)) of just 0.68 mΩ. This ultra-low resistance minimizes power dissipation during operation, leading to higher efficiency and reduced heat generation. Such performance is vital in automotive environments where thermal management is crucial for reliability and longevity. The device’s ability to handle high continuous current makes it ideal for a variety of applications, including electric power steering (EPS), braking systems, and DC-DC converters in electric and hybrid vehicles (EVs/HEVs).

Furthermore, the MOSFET is AEC-Q101 qualified, ensuring it meets the stringent quality and reliability standards required for automotive components. It is designed to operate reliably under harsh conditions, including extreme temperatures and voltage fluctuations. The incorporation of a lead-free, green package also aligns with global environmental regulations, making it a sustainable choice for next-generation automotive designs.

The optimized gate charge (Qg) of the IPD068N10N3GATMA1 contributes to faster switching speeds, which is essential for high-frequency applications. This allows designers to create more compact and lightweight systems without compromising performance. Additionally, the device’s enhanced avalanche ruggedness provides extra protection against voltage spikes, further increasing system robustness.

In summary, the Infineon IPD068N10N3GATMA1 represents a significant advancement in power MOSFET technology, offering automotive engineers a reliable, high-efficiency component that meets the evolving needs of the industry.

ICGOODFIND: The Infineon IPD068N10N3GATMA1 is a top-tier 100V N-channel MOSFET that excels in automotive applications due to its ultra-low RDS(on), high current handling, AEC-Q101 compliance, and superior switching performance, making it a cornerstone for efficient and reliable power management.

Keywords: Automotive MOSFET, High Efficiency, Low RDS(on), AEC-Q101 Qualified, Power Switching.