Infineon G1H1202: A High-Performance 1200V IGBT for Advanced Power Conversion Systems

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is the Insulated Gate Bipolar Transistor (IGBT), a workhorse for medium to high-power applications. The Infineon G1H1202 stands out as a prime example, engineered specifically to meet the demanding requirements of advanced power conversion systems.

This 1200V IGBT is built upon Infineon's robust and proven trench gate field-stop technology. This foundation is critical to its performance, enabling a superior trade-off between low saturation voltage (Vce(sat)) and minimal switching losses. For system designers, this translates directly into higher overall efficiency, reduced thermal stress, and the potential for smaller heatsinks and more compact system designs.

A key feature of the G1H1202 is its optimized internal diode (anti-parallel emitter-controlled diode). This design ensures soft reverse recovery behavior, which is paramount for minimizing voltage overshoots and electromagnetic interference (EMI) in inverter circuits. This characteristic makes it exceptionally suitable for hard- and soft-switching topologies found in motor drives, uninterruptible power supplies (UPS), solar inverters, and industrial welding equipment.

Furthermore, the device offers exceptional ruggedness and operational safety. It features a short-circuit withstand capability of 5µs, providing a critical window for control circuits to detect a fault and safely shut down the system, thereby preventing catastrophic failures. Its high maximum operating junction temperature (Tvjop) of 175°C further enhances its reliability under strenuous operating conditions.

The combination of low loss switching, high current density, and strong ruggedness allows engineers to push the boundaries of their designs. By implementing the G1H1202, they can achieve systems that are not only more efficient but also more cost-effective and reliable over their entire lifetime.

ICGOODFIND: The Infineon G1H1202 is a high-performance 1200V IGBT that excels in advanced power systems due to its exceptional efficiency, stemming from low Vce(sat) and switching losses, a soft recovery body diode for reduced EMI, and robust short-circuit ruggedness for enhanced application safety and reliability.

Keywords: IGBT, Infineon G1H1202, Power Conversion, 1200V, Efficiency